Barrier-width dependence of quantum efficiencies of GaN/Al x Ga 1x N multiple quantum wells

Well-width dependence of the quantum efficiencies of GaN/Al x Ga 1x N multiple quantum wells

Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells

The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronholewave functions, absorption coefficient, and dielectric con...

وابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی

Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...

Optimizing GaN/A1GaN Multiple Quantum Well Structures by TimeResolved Photoluminescence

We present the results of picosecond time-resolved photoluminescence (PL) measurements for GaN/A1Ga1N MQWs with varying structural parameters, grown by metalorganic chemical vapor deposition under the optimal (iaN-like growth conditions. We have shown that the optimal GaN/A1GaN (x 0.2) MQW structures for UV light emitter applications are those with well widths ranging from 12 and 42 A and barri...

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN Al GaN quantum wells

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either aor m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been processed using the epitaxial lateral overgrowth technique. As expected for polarization-free heterostructures, the larger the QW width for a given...